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Yttrium arsenide is an inorganic compound of yttrium and arsenic with the chemical formula YAs. It can be prepared by reacting yttrium and arsenic at high temperature.[2] Some literature has done research on the eutectic system of it and zinc arsenide.[3]
It reacts with iron, iron(III) arsenide, iron(III) oxide and yttrium(III) fluoride (for doping) at high temperature to obtain superconducting material YFeAsO0.9F0.1 (Tc=10.2 K).[4]
References
- ^ Lide DR (1998). Handbook of Chemistry and Physics (87 ed.). Boca Raton, Florida: CRC Press. pp. 4–94. ISBN 0-8493-0594-2.
- ^ Brixner LH (1960-09-01). "Structure and electrical properties of some new rare earth arsenides, antimonides and tellurides". Journal of Inorganic and Nuclear Chemistry. 15 (1–2): 199–201. doi:10.1016/0022-1902(60)80038-3. Retrieved 2021-09-09.
- ^ Mirzaakhmedov, M.; Khuseinov, B.; Pishchikov, D. I.; Marenkin, S. F. Interaction in the zinc diarsenide-yttrium arsenide system(in Russian). Zhurnal Neorganicheskoi Khimii, 1990. 35 (10): 2622-2624.
- ^ Chong SV, Mochiji T, Kadowaki K (2009-03-01). "Superconductivity in yttrium iron oxyarsenide system". Journal of Physics: Conference Series. 150 (5). IOP Publishing: 052036. arXiv:0808.0288. Bibcode:2009JPhCS.150e2036C. doi:10.1088/1742-6596/150/5/052036. ISSN 1742-6588. S2CID 250692964.
External reading
- Taylor JB, Calvert LD, Despault JG, Gabe EJ, Murray JJ (1974-08-01). "The rare-earth arsenides: Non-stoichiometry in the rocksalt phases". Journal of the Less Common Metals. 37 (2): 217–232. doi:10.1016/0022-5088(74)90038-1. Archived from the original on 2018-06-04. Retrieved 2021-09-09.
- Kaurav N, Kuo YJ, Joshi G, Choudhary KK, Varshney D (2008-12-01). "High-pressure structural phase transition and elastic properties of yttrium pnictides". High Pressure Research. 28 (4): 651–663. Bibcode:2008HPR....28..651K. doi:10.1080/08957950802348542. ISSN 0895-7959. S2CID 93223534. Retrieved 2021-09-09.
- Zhang Z, Guo Y, Robertson J (2020-06-22). "Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces". Applied Physics Letters. 116 (25): 251602. Bibcode:2020ApPhL.116y1602Z. doi:10.1063/5.0007479. ISSN 0003-6951. S2CID 226402018. Archived from the original on 2021-09-09. Retrieved 2021-09-09.
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